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ipd030n03lf2satma1 Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1
ipd030n03lf2satma1 Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD030N03LF2SATMA1
Enrgtech Part No:
ET28407560
Warranty:
Manufacturer
$ 0.84 $ 0.84
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
99A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PG-TO252-3
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.05mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
16nC
Maximum Power Dissipation Pd:
EL Connector Housing
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, DIN IEC 68-1: 55/175/56, RoHS
Automotive Standard:
No
pdf icon
A700000013399298.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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