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ipd023n03lf2satma1 Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
ipd023n03lf2satma1 Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1

Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1

Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD023N03LF2SATMA1
Enrgtech Part No:
ET28407559
Warranty:
Manufacturer
$ 0.95 $ 0.95
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
137A
Maximum Drain Source Voltage Vds:
30V
Series:
OptiMOS
Package Type:
PG-TO252-3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.35mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
107W
Typical Gate Charge Qg @ Vgs:
39nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
Automotive Standard:
No
pdf icon
A700000013399282.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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