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ipb339n20nm6atma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
ipb339n20nm6atma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB339N20NM6ATMA1
Enrgtech Part No:
ET28407541
Warranty:
Manufacturer
$ 3.56 $ 3.56
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
39A
Maximum Drain Source Voltage Vds:
200V
Package Type:
PG-TO263-3
Series:
OptiMOS-TM6
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
33.9mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
15.9nC
Maximum Power Dissipation Pd:
125W
Maximum Operating Temperature:
175°C
Standards/Approvals:
DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
Automotive Standard:
No
pdf icon
A700000013399246.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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