Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1

For more information please check the datasheets.

Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1

Manufacturer:

Infineon

Manufacturer Part No:

AIMZH120R010M1TXKSA1

Enrgtech Part No:

ET28407519

Warranty:

Manufacturer

$ 49.42

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

202A

Maximum Drain Source Voltage Vds:

1200V

Package Type:

PG-TO-247-4-STD-NT6.7

Series:

CoolSiC

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

11.3mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

23 V

A700000013398394.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1

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