Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

For more information please check the datasheets.

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

Manufacturer:

Infineon

Manufacturer Part No:

IMZA65R015M2HXKSA1

Enrgtech Part No:

ET28407490

Warranty:

Manufacturer

$ 23.62

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

103A

Maximum Drain Source Voltage Vds:

650V

Series:

CoolSiC

Package Type:

PG-TO247-4

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

18mΩ

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

79nC

Maximum Power Dissipation Pd:

341W

A700000013399014.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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