Infineon CoolSiC Type N-Channel MOSFET, 49 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R040M2HXTMA1

Infineon CoolSiC Type N-Channel MOSFET, 49 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R040M2HXTMA1

Manufacturer:
Manufacturer Part No:
IMBG65R040M2HXTMA1
Enrgtech Part No:
ET28407485
Warranty:
Manufacturer
$ 9.13 $ 9.13
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
49A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolSiC
Package Type:
PG-TO263-7
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
49mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
197W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
28nC
Maximum Gate Source Voltage Vgs:
23 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000013398398.pdf(datasheets)
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