Infineon CoolSiC Type N-Channel MOSFET, 115 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1

Infineon CoolSiC Type N-Channel MOSFET, 115 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1

Manufacturer:
Manufacturer Part No:
IMBG65R015M2HXTMA1
Enrgtech Part No:
ET28407483
Warranty:
Manufacturer
$ 21.09 $ 21.09
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
115A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolSiC
Package Type:
PG-TO263-7
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
18mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
416W
Maximum Gate Source Voltage Vgs:
23 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
79nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000013398358.pdf(datasheets)
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