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ipd60r600cm8xtma1 Infineon OptiMOS Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1
ipd60r600cm8xtma1 Infineon OptiMOS Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1

Infineon OptiMOS Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1

Infineon OptiMOS Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD60R600CM8XTMA1
Enrgtech Part No:
ET28407476
Warranty:
Manufacturer
$ 0.75 $ 0.75
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
7A
Maximum Drain Source Voltage Vds:
650V
Series:
OptiMOS
Package Type:
PG-TO252-3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.6Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
64W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
6nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000013399370.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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