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iaucn04s6n017tatma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1
iaucn04s6n017tatma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IAUCN04S6N017TATMA1
Enrgtech Part No:
ET28407453
Warranty:
Manufacturer
$ 1.48 $ 1.48
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
200A
Maximum Drain Source Voltage Vds:
40V
Package Type:
PG-LHDSO-10-1
Series:
OptiMOS-TM6
Mount Type:
Surface
Pin Count:
10
Maximum Drain Source Resistance Rds:
2.05mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
380mV
Forward Voltage Vf:
0.8V
Typical Gate Charge Qg @ Vgs:
38nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS, AEC-Q101
Automotive Standard:
AEC-Q101
pdf icon
A700000013398724.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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