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iaucn04s6n009tatma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 330 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1
iaucn04s6n009tatma1 Infineon OptiMOS-TM6 Type N-Channel MOSFET, 330 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 330 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 330 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IAUCN04S6N009TATMA1
Enrgtech Part No:
ET28407452
Warranty:
Manufacturer
$ 2.32 $ 2.32
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
330A
Maximum Drain Source Voltage Vds:
40V
Series:
OptiMOS-TM6
Package Type:
PG-LHDSO-10-2
Mount Type:
Surface
Pin Count:
10
Maximum Drain Source Resistance Rds:
1.1mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
80nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
178W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.8V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS, AEC-Q101
Automotive Standard:
AEC-Q101
pdf icon
A700000013398682.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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