Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PG-LHSOF-4 IPTA60R180CM8XTMA1

For more information please check the datasheets.

Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PG-LHSOF-4 IPTA60R180CM8XTMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPTA60R180CM8XTMA1

Enrgtech Part No:

ET28407441

Warranty:

Manufacturer

$ 1.96

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

18A

Maximum Drain Source Voltage Vds:

600V

Package Type:

PG-LHSOF-4

Series:

IPT

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

180mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

20 V

A700000013398132.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PG-LHSOF-4 IPTA60R180CM8XTMA1

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