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ipt60t022s7xtma1 Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
ipt60t022s7xtma1 Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPT60T022S7XTMA1
Enrgtech Part No:
ET28407438
Warranty:
Manufacturer
$ 13.83 $ 13.83
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
23A
Maximum Drain Source Voltage Vds:
600V
Package Type:
PG-HSOF-8
Series:
IPT
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
390W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.82V
Typical Gate Charge Qg @ Vgs:
150nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC, JS-001, RoHS
Automotive Standard:
No
pdf icon
A700000013399858.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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