Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1

Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1

Manufacturer:
Manufacturer Part No:
IPT60R180CM8XTMA1
Enrgtech Part No:
ET28407437
Warranty:
Manufacturer
$ 2.04 $ 2.04
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
600V
Series:
IPT
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
180mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
119W
Typical Gate Charge Qg @ Vgs:
17nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC, RoHS
Automotive Standard:
No
pdf icon
A700000013399846.pdf(datasheets)
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