Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1

Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1

Manufacturer:
Manufacturer Part No:
IPT60R016CM8XTMA1
Enrgtech Part No:
ET28407435
Warranty:
Manufacturer
$ 21.26 $ 21.26
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Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
142A
Maximum Drain Source Voltage Vds:
600V
Series:
IPT
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
16mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
694W
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
171nC
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC
Automotive Standard:
No
pdf icon
A700000013399822.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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