Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 60 A, 1200 V Enhancement F411MR12W2M1HPB76BPSA1

Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 60 A, 1200 V Enhancement F411MR12W2M1HPB76BPSA1

Manufacturer:
Manufacturer Part No:
F411MR12W2M1HPB76BPSA1
Enrgtech Part No:
ET28407431
Warranty:
Manufacturer
$ 272.66 $ 272.66
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
1200V
Series:
F4-11MR12W2M1H_B70
Mount Type:
Screw
Maximum Drain Source Resistance Rds:
23.1mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
20mW
Forward Voltage Vf:
5.35V
Maximum Gate Source Voltage Vgs:
23 V
Minimum Operating Temperature:
-40°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
60749, IEC 60747, 60068
Automotive Standard:
No
pdf icon
A700000013399610.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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