Infineon IPD Type N-Channel MOSFET, 54 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T040S7AXTMA1

Infineon IPD Type N-Channel MOSFET, 54 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T040S7AXTMA1

Manufacturer:
Manufacturer Part No:
IPDQ60T040S7AXTMA1
Enrgtech Part No:
ET28407393
Warranty:
Manufacturer
$ 10.30 $ 10.30
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
54A
Maximum Drain Source Voltage Vds:
60V
Series:
IPD
Package Type:
PG-HDSOP-22
Mount Type:
Surface
Pin Count:
22
Maximum Drain Source Resistance Rds:
40mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
272W
Typical Gate Charge Qg @ Vgs:
83nC
Forward Voltage Vf:
0.82V
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS, AEC Q101, JEDEC
Automotive Standard:
AEC-Q101
pdf icon
A700000013399550.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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