Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

For more information please check the datasheets.

Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPDQ60T017S7AXTMA1

Enrgtech Part No:

ET28407391

Warranty:

Manufacturer

$ 20.12

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

113A

Maximum Drain Source Voltage Vds:

600V

Package Type:

PG-HDSOP-22

Series:

IPD

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.017Ω

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

30 V

Minimum Operating Temperature:

-55°C

A700000013399478.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

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