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isg0616n10nm5hscatma1 Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1
isg0616n10nm5hscatma1 Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

Manufacturer:
Infineon
Manufacturer Part No:
ISG0616N10NM5HSCATMA1
Enrgtech Part No:
ET28407360
Warranty:
Manufacturer
$ 5.52 $ 5.52
Checking for live stock
Product Type:
1 x 1 x 0.38mm
Channel Type:
Type N
Maximum Continuous Drain Current Id:
139A
Maximum Drain Source Voltage Vds:
100V
Package Type:
PG-WHITFN-10-1
Series:
ISG
Mount Type:
Surface
Pin Count:
10
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Power Dissipation Pd:
167W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
52nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, RoHS
Automotive Standard:
No
pdf icon
A700000013398758.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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