Infineon ISC Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1

Infineon ISC Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1

Manufacturer:
Manufacturer Part No:
ISC110N12NM6ATMA1
Enrgtech Part No:
ET28407356
Warranty:
Manufacturer
$ 1.34 $ 1.34
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
62A
Maximum Drain Source Voltage Vds:
120V
Package Type:
PG-TDSON-8
Series:
ISC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
11mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
15.4nC
Maximum Power Dissipation Pd:
94W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, JEDEC, J-STD-020, RoHS
Automotive Standard:
No
pdf icon
A700000013398621.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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