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iptg029n13nm6atma1 Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1
iptg029n13nm6atma1 Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1

Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1

Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPTG029N13NM6ATMA1
Enrgtech Part No:
ET28407350
Warranty:
Manufacturer
$ 7.38 $ 7.38
Checking for live stock
Product Type:
1 x 1 x 0.38mm
Channel Type:
Type N
Maximum Continuous Drain Current Id:
212A
Maximum Drain Source Voltage Vds:
135V
Package Type:
PG-HSOG-8
Series:
IPT
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2.9mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
104nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
294W
Maximum Operating Temperature:
175°C
Standards/Approvals:
J-STD-020, RoHS, IEC61249-2-21
Automotive Standard:
No
pdf icon
A700000013398208.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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