Infineon IPT Type N-Channel MOSFET, 87 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1

Infineon IPT Type N-Channel MOSFET, 87 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1

Manufacturer:
Manufacturer Part No:
IPT129N20NM6ATMA1
Enrgtech Part No:
ET28407346
Warranty:
Manufacturer
$ 7.95 $ 7.95
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
87A
Maximum Drain Source Voltage Vds:
200V
Series:
IPT
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
12.9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
234W
Typical Gate Charge Qg @ Vgs:
37nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, JEDEC, J-STD-020, RoHS
Automotive Standard:
No
pdf icon
A700000013399813.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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