Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

Manufacturer:
Manufacturer Part No:
IPT067N20NM6ATMA1
Enrgtech Part No:
ET28407345
Warranty:
Manufacturer
$ 9.05 $ 9.05
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Product Type:
1 x 1 x 0.38mm
Channel Type:
Type N
Maximum Continuous Drain Current Id:
137A
Maximum Drain Source Voltage Vds:
200V
Series:
IPT
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
6.7mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
300W
Typical Gate Charge Qg @ Vgs:
71nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
Automotive Standard:
No
pdf icon
A700000013399798.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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