Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1

Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1

Manufacturer:
Manufacturer Part No:
IPT020N13NM6ATMA1
Enrgtech Part No:
ET28407338
Warranty:
Manufacturer
$ 5.86 $ 5.86
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Channel Type:
Type N
Product Type:
1 x 1 x 0.38mm
Maximum Continuous Drain Current Id:
297A
Maximum Drain Source Voltage Vds:
135V
Series:
IPT
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
159nC
Maximum Power Dissipation Pd:
39W
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, J-STD-020, RoHS
Automotive Standard:
No
pdf icon
A700000013399790.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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