Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

For more information please check the datasheets.

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

Manufacturer:

Infineon

Manufacturer Part No:

IMYH200R100M1HXKSA1

Enrgtech Part No:

ET28407334

Warranty:

Manufacturer

$ 23.45

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

26A

Maximum Drain Source Voltage Vds:

2000V

Package Type:

PG-TO-247-4-PLUS-NT14

Series:

CoolSiC

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

142mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

55nC

A700000013398978.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

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