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imbg120r181m2hxtma1 Infineon IMB Type N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
imbg120r181m2hxtma1 Infineon IMB Type N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IMBG120R181M2HXTMA1
Enrgtech Part No:
ET28407327
Warranty:
Manufacturer
$ 5.25 $ 5.25
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
10.5A
Maximum Drain Source Voltage Vds:
1200V
Package Type:
PG-TO263-7
Series:
IMB
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
181.4mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±25 V
Typical Gate Charge Qg @ Vgs:
9.7nC
Maximum Power Dissipation Pd:
94W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Height:
4.5mm
Length:
15mm
Width:
10.2 mm
Standards/Approvals:
JEDEC47/20/22, RoHS
Automotive Standard:
No
pdf icon
A700000013398298.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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