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imbg120r053m2hxtma1 Infineon IMB Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1
imbg120r053m2hxtma1 Infineon IMB Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IMBG120R053M2HXTMA1
Enrgtech Part No:
ET28407324
Warranty:
Manufacturer
$ 9.54 $ 9.54
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
1200V
Package Type:
PG-TO263-7
Series:
IMB
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
52.6mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±25 V
Maximum Power Dissipation Pd:
571 (Green) nm, 631 (Red) nm
Typical Gate Charge Qg @ Vgs:
30nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
JEDEC47/20/22, RoHS
Width:
10.2 mm
Length:
15mm
Height:
4.5mm
Automotive Standard:
No
pdf icon
A700000013398235.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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