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imbg120r008m2hxtma1 Infineon IMB Type N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1
imbg120r008m2hxtma1 Infineon IMB Type N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1

Infineon IMB Type N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IMBG120R008M2HXTMA1
Enrgtech Part No:
ET28407318
Warranty:
Manufacturer
$ 56.56 $ 56.56
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
189A
Maximum Drain Source Voltage Vds:
1200V
Package Type:
PG-TO263-7
Series:
IMB
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
21mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±25 V
Typical Gate Charge Qg @ Vgs:
195nC
Maximum Power Dissipation Pd:
800W
Maximum Operating Temperature:
200°C
Height:
4.5mm
Width:
10.2 mm
Standards/Approvals:
JEDEC47/20/22, RoHS
Length:
15mm
Automotive Standard:
No
pdf icon
A700000013398114.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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