Infineon OptiMOS-TM5 Type N-Channel MOSFET, 310 A, 100 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN10S5N016GAUMA1

Infineon OptiMOS-TM5 Type N-Channel MOSFET, 310 A, 100 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN10S5N016GAUMA1

Manufacturer:
Manufacturer Part No:
IAUMN10S5N016GAUMA1
Enrgtech Part No:
ET28407267
Warranty:
Manufacturer
$ 5.01 $ 5.01
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
310A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS-TM5
Package Type:
PG-HSOG-4-1
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
2.1mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
142nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
325W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
175°C
Standards/Approvals:
AEC-Q101, RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000013399254.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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