Infineon OptiMOS-TM5 Type N-Channel MOSFET, 350 A, 80 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN08S5N013GAUMA1

For more information please check the datasheets.

Infineon OptiMOS-TM5 Type N-Channel MOSFET, 350 A, 80 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN08S5N013GAUMA1

Manufacturer:

Infineon

Manufacturer Part No:

IAUMN08S5N013GAUMA1

Enrgtech Part No:

ET28407266

Warranty:

Manufacturer

$ 4.69

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

350A

Maximum Drain Source Voltage Vds:

80V

Package Type:

PG-HSOG-4-1

Series:

OptiMOS-TM5

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

1.8mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

20 V

Maximum Power Dissipation Pd:

307W

A700000013399234.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS-TM5 Type N-Channel MOSFET, 350 A, 80 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN08S5N013GAUMA1

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