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iaucn04s7n009atma1 Infineon OptiMOS-TM7 Type N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
iaucn04s7n009atma1 Infineon OptiMOS-TM7 Type N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1

Infineon OptiMOS-TM7 Type N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1

Infineon OptiMOS-TM7 Type N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IAUCN04S7N009ATMA1
Enrgtech Part No:
ET28407256
Warranty:
Manufacturer
$ 1.38 $ 1.38
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
268A
Maximum Drain Source Voltage Vds:
40V
Package Type:
PG-TDSON-8-34
Series:
OptiMOS-TM7
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.2mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.8V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
145W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
57nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
AEC-Q101, RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000013398994.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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