Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1

Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1

Manufacturer:
Manufacturer Part No:
IPP60R016CM8XKSA1
Enrgtech Part No:
ET28407249
Warranty:
Manufacturer
$ 14.41 $ 14.41
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
B32620
Maximum Drain Source Voltage Vds:
600V
Package Type:
PG-TO220-3
Series:
IPP
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
16mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
625W
Typical Gate Charge Qg @ Vgs:
171nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
JEDEC, RoHS
Automotive Standard:
No
pdf icon
A700000013399688.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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