Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1

Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1

Manufacturer:
Manufacturer Part No:
IPDQ60T022S7XTMA1
Enrgtech Part No:
ET28407248
Warranty:
Manufacturer
$ 15.95 $ 15.95
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
600V
Series:
IPD
Package Type:
PG-HDSOP-22
Mount Type:
Surface
Pin Count:
22
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
416W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
150nC
Forward Voltage Vf:
0.82V
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC, JS-001, RoHS
Automotive Standard:
No
pdf icon
A700000013399530.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews