Infineon OptiMOS Type N-Channel MOSFET, 72 A, 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1

Infineon OptiMOS Type N-Channel MOSFET, 72 A, 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1

Manufacturer:
Manufacturer Part No:
IPDD60R037CM8XTMA1
Enrgtech Part No:
ET28407242
Warranty:
Manufacturer
$ 8.53 $ 8.53
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
72A
Maximum Drain Source Voltage Vds:
650V
Series:
OptiMOS
Package Type:
PG-HDSOP-10
Mount Type:
Surface
Pin Count:
10
Maximum Drain Source Resistance Rds:
0.66W
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
416W
Typical Gate Charge Qg @ Vgs:
79nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000013399385.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews