Infineon Trench Igbt 3 FB50R07W2E3_B23 Type P-Channel MOSFET Depletion EasyPIM FB50R07W2E3B23BOMA1

For more information please check the datasheets.

Infineon Trench Igbt 3 FB50R07W2E3_B23 Type P-Channel MOSFET Depletion EasyPIM FB50R07W2E3B23BOMA1

Manufacturer:

Infineon

Manufacturer Part No:

FB50R07W2E3B23BOMA1

Enrgtech Part No:

ET28407229

Warranty:

Manufacturer

$ 78.95

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Channel Type:

Type P

Product Type:

MOSFET

Package Type:

EasyPIM

Series:

FB50R07W2E3_B23

Mount Type:

Screw

Channel Mode:

Depletion

Maximum Gate Source Voltage Vgs:

±20 V

Forward Voltage Vf:

1.95V

Minimum Operating Temperature:

-40°C

Maximum Power Dissipation Pd:

20mW

Maximum Operating Temperature:

150°C

Transistor Configuration:

Trench Igbt 3

A700000013397946.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon Trench Igbt 3 FB50R07W2E3_B23 Type P-Channel MOSFET Depletion EasyPIM FB50R07W2E3B23BOMA1

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