ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1

ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1

Manufacturer:
Manufacturer Part No:
HT8KE6TB1
Enrgtech Part No:
ET28398812
Warranty:
Manufacturer
$ 0.94 $ 0.94
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
100V
Series:
HT8K
Package Type:
HSMT-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
57mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
14W
Typical Gate Charge Qg @ Vgs:
91Ω
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000013059552.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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