Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

For more information please check the datasheets.

Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

Manufacturer:

Infineon

Manufacturer Part No:

IMYH200R024M1HXKSA1

Enrgtech Part No:

ET28373720

Warranty:

Manufacturer

$ 31.71

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

89A

Maximum Drain Source Voltage Vds:

2000V

Series:

CoolSiC 2000 V SiC Trench MOSFET

Package Type:

PG-TO-247-4-PLUS-NT14

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

35mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

576W

Typical Gate Charge Qg @ Vgs:

137nC

A700000012710324.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

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