siss4409dn-t1-ge3 Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

For more information please check the datasheets.

Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS4409DN-T1-GE3

Enrgtech Part No:

ET28368874

Warranty:

Manufacturer

$ 0.61

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Product Type:

MOSFET

Channel Type:

Type P

Maximum Continuous Drain Current Id:

59.2A

Maximum Drain Source Voltage Vds:

40V

Series:

SISS

Package Type:

1212-8S

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.009Ω

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

56.8W

Maximum Gate Source Voltage Vgs:

±20 V

A700000010767153.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

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