ROHM RQ3 Type P-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB

ROHM RQ3 Type P-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB

Manufacturer:
Manufacturer Part No:
RQ3L120BJFRATCB
Enrgtech Part No:
ET28362089
Warranty:
Manufacturer
$ 0.66 $ 0.66
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
60V
Series:
625 mW
Package Type:
HSMT-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
106mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
40W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
15.7nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
AEC-Q101
Automotive Standard:
AEC-Q101
pdf icon
A700000012517164.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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