sihb080n60e-ge3 Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

For more information please check the datasheets.

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHB080N60E-GE3

Enrgtech Part No:

ET26056153

Warranty:

Manufacturer

$ 3.83

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

35A

Maximum Drain Source Voltage Vds:

600V

Package Type:

TO-263

Series:

SIHB

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.08Ω

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

3.4Mbit/s

Maximum Power Dissipation Pd:

ZNR

A700000009890867.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

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