Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IPD90N06S405ATMA2
Enrgtech Part No:
ET24143464
Warranty:
Manufacturer
$ 0.53 $ 0.53
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
60V
Series:
IPD
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
81W
Typical Gate Charge Qg @ Vgs:
80nC
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000009016797.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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