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iss55ep06lmxtsa1 Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23
iss55ep06lmxtsa1 Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23

Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23

Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23

Manufacturer:
Infineon
Manufacturer Part No:
ISS55EP06LMXTSA1
Enrgtech Part No:
ET24128797
Warranty:
Manufacturer
$ 0.05 $ 0.05
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
0.18A
Maximum Drain Source Voltage Vds:
60V
Series:
ISS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
81W
Typical Gate Charge Qg @ Vgs:
80nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
Distrelec Product Id:
304-40-557
pdf icon
A700000008900328.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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