Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212

For more information please check the datasheets.

Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212

Manufacturer:

Vishay

Manufacturer Part No:

SiSS54DN-T1-GE3

Enrgtech Part No:

ET22535421

Warranty:

Manufacturer

$ 0.83

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

185.6A

Maximum Drain Source Voltage Vds:

30V

Series:

TrenchFET

Package Type:

PowerPAK 1212

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

1.06mΩ

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

47.5nC

Maximum Gate Source Voltage Vgs:

16 V

A700000008282663.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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