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sish892bdn-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212
sish892bdn-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Manufacturer:
Vishay
Manufacturer Part No:
SiSH892BDN-T1-GE3
Enrgtech Part No:
ET22535420
Warranty:
Manufacturer
$ 0.38 $ 0.38
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
100V
Package Type:
PowerPAK 1212
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
30.4mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
29W
Typical Gate Charge Qg @ Vgs:
17.4nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282679.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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