Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247

Manufacturer:
Manufacturer Part No:
SIHG24N80AE-GE3
Enrgtech Part No:
ET22535392
Warranty:
Manufacturer
$ 3.26 $ 3.26
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
21A
Maximum Drain Source Voltage Vds:
850V
Package Type:
TO-247
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
184mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
208W
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
59nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282539.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews