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sihb5n80ae-ge3 Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263
sihb5n80ae-ge3 Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263

Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263

Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263

Manufacturer:
Vishay
Manufacturer Part No:
SIHB5N80AE-GE3
Enrgtech Part No:
ET21641735
Warranty:
Manufacturer
$ 1.19 $ 1.19
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
800V
Series:
E
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.3Ω
Typical Gate Charge Qg @ Vgs:
75µA
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
62.5W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Length:
10.67mm
Width:
9.65 mm
Height:
15.88mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007970307.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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