Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1

Manufacturer:
Manufacturer Part No:
IPD60R280CFD7ATMA1
Enrgtech Part No:
ET21632804
Warranty:
Manufacturer
$ 1.13 $ 1.13
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-252
Series:
CoolMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
51W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
18nC
Forward Voltage Vf:
1V
Standards/Approvals:
No
Width:
6.22 mm
Height:
2.41mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007835351.pdf(datasheets)
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