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ipd50n06s4l08atma2 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
ipd50n06s4l08atma2 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD50N06S4L08ATMA2
Enrgtech Part No:
ET21632802
Warranty:
Manufacturer
$ 0.44 $ 0.44
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7.8mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
49nC
Maximum Power Dissipation Pd:
71W
Maximum Gate Source Voltage Vgs:
16 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
6.5mm
Standards/Approvals:
No
Height:
2.3mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007835455.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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