Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR

Manufacturer:
Manufacturer Part No:
AUIRF7103QTR
Enrgtech Part No:
ET21632775
Warranty:
Manufacturer
$ 1.54 $ 1.54
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3A
Maximum Drain Source Voltage Vds:
50V
Package Type:
SO-8
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
130mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Transistor Configuration:
Dual
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
1.5mm
Width:
4 mm
Length:
5mm
Number of Elements per Chip:
1
Automotive Standard:
AEC-Q101
pdf icon
A700000007835387.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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