Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263

Manufacturer:
Manufacturer Part No:
AUIRF2804STRL7P
Enrgtech Part No:
ET21632774
Warranty:
Manufacturer
$ 2.00 $ 2.00
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
320A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
1.6mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
8 Kbyte
Maximum Power Dissipation Pd:
330W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
10.67mm
Height:
4.83mm
Width:
9.65 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007835755.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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