Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

Manufacturer:
Manufacturer Part No:
IRLMS6802TRPBF
Enrgtech Part No:
ET21626940
Warranty:
Manufacturer
$ 0.15 $ 0.15
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Product Type:
MOSFET & Diode
Channel Type:
Type P
Maximum Continuous Drain Current Id:
5.6A
Maximum Drain Source Voltage Vds:
20V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
2
Maximum Drain Source Resistance Rds:
50mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
16nC
Maximum Power Dissipation Pd:
2W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Height:
3mm
Length:
3mm
Width:
1 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726424.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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